Chinese Name: Tetramethylammonium Silicate

English name: Tetramethylammonium silicate

Molecular formula: C ₁₆ H ₄₈ N ₄ O ₄ Yes

Form of supply: usually 15-20% aqueous solution

Mechanism of Action and Applications: This product is a source of soluble silicate with extremely high purity and free of metal ions.

Aluminum / Copper corrosion inhibitor: during aluminum cleaning ( All ) or copper ( Cu ) During interconnect patterning, strongly alkaline cleaning solutions can readily corrode metals. Upon addition of tetramethylammonium silicate, silicate ions preferentially adsorb onto the metal surface to form an ultra-thin protective film that inhibits corrosion, while the tetramethylammonium cations maintain the solution’s alkalinity to facilitate the removal of photoresist residues.

Interlayer dielectric deposition precursor: As a non-metallic silicon source, it can also be used in specific chemical vapor deposition ( Chemical Vapor Deposition ) or spin-coating of an insulating layer, which is used to fabricate high-purity silicon dioxide thin films and thereby avoids the risk of sodium-ion contamination associated with conventional sodium silicate.

Market entry barrier: The core competitive advantage of this product lies in its ability to detect metallic impurities ( parts per billion level) and particulate matter control capabilities. Our products undergo specialized ion-exchange and filtration processes, fully meeting the stringent standards for semiconductor-grade reagents.  。   

Application Domain Background:

Industry Background: The Challenge of Atomic-Level Cleanliness

In the semiconductor manufacturing process, the wafer cleaning step accounts for a significant portion of the total process steps. 30% That concludes the discussion. As process nodes continue to shrink, even trace amounts of metallic ion contamination—such as sodium, potassium, and iron—can lead to transistor leakage or breakdown. Traditional inorganic bases (such as NaOH/KOH ) Due to the presence of metal ions, its use in advanced manufacturing processes is strictly prohibited; instead, tetramethylammonium hydroxide is employed ( TMAH ) and other organic base systems.

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Chinese Name: Tetramethylammonium Silicate

English name: Tetramethylammonium silicate

Molecular formula: C ₁₆ H ₄₈ N ₄ O ₄ Yes

Form of supply: usually 15-20% aqueous solution

Mechanism of Action and Applications: This product is a source of soluble silicate with extremely high purity and free of metal ions.

Aluminum / Copper corrosion inhibitor: during aluminum cleaning ( All ) or copper ( Cu ) During interconnect patterning, strongly alkaline cleaning solutions can readily corrode metals. Upon addition of tetramethylammonium silicate, silicate ions preferentially adsorb onto the metal surface to form an ultra-thin protective film that inhibits corrosion, while the tetramethylammonium cations maintain the solution’s alkalinity to facilitate the removal of photoresist residues.

Interlayer dielectric deposition precursor: As a non-metallic silicon source, it can also be used in specific chemical vapor deposition ( Chemical Vapor Deposition ) or spin-coating of an insulating layer, which is used to fabricate high-purity silicon dioxide thin films and thereby avoids the risk of sodium-ion contamination associated with conventional sodium silicate.

Market entry barrier: The core competitive advantage of this product lies in its ability to detect metallic impurities ( parts per billion level) and particulate matter control capabilities. Our products undergo specialized ion-exchange and filtration processes, fully meeting the stringent standards for semiconductor-grade reagents.  。   

Application Domain Background:

Industry Background: The Challenge of Atomic-Level Cleanliness

In the semiconductor manufacturing process, the wafer cleaning step accounts for a significant portion of the total process steps. 30% That concludes the discussion. As process nodes continue to shrink, even trace amounts of metallic ion contamination—such as sodium, potassium, and iron—can lead to transistor leakage or breakdown. Traditional inorganic bases (such as NaOH/KOH ) Due to the presence of metal ions, its use in advanced manufacturing processes is strictly prohibited; instead, tetramethylammonium hydroxide is employed ( TMAH ) and other organic base systems.